HGTG18N120BND
Manufacturer:
On Semiconductor
Mfr.Part #:
HGTG18N120BND
Datasheet:
Description:
IGBTs TO-247-3 Through Hole Single 1.2 kV 390 W 54 A
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Tube |
| RoHS | Compliant |
| Power Dissipation | 390 W |
| Max Collector Current | 54 A |
| Element Configuration | Single |
| Collector Emitter Voltage (VCEO) | 1.2 kV |
| Collector Emitter Saturation Voltage | 2.45 V |
| Maximum Gate Emitter Voltage | -20 V, 20 V |
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